Symbol. Parameter. Test Condition. Min. Max. Units. Off Characteristics. BV(BR)CEO. Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0. 40. V. BV(BR) Jan 16, 2004 - A. 5.24. 5.84. B. 4.52. 4.97. C. 4.31. 5.33. D. 0.40. 0.53. E. -. 0.76. F. -. 1.27. G. -. 2.97. H. 0.91. 1.17. J. 0.71. 1.21. K. 12.70. -. L. 45°. Dimensions : Millimetres. DESCRIPTION. The 2N2219A and 2N2222A are silicon Planar. Epitaxial NPN transistors in Jedec TO-39 (for. 2N2219A) and in Jedec TO-18 (for 2N2222A).Maximum ratings (TA = 25°C). Grenzwerte (TA = 25°C). PN2222A / 2N2222A. Collector-Emitter-volt. - Kollektor-Emitter-Spannung. E open. VCB0. 75 V. pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding A listing of ON Semiconductor's product/patent coverage may be accessed at onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the PN2221 PN2221A. MAXIMUM RATINGS: (TA=25°C). SYMBOL. PN2222 PN2222A. UNITS. Collector-Base Voltage. VCBO. 60. 75. V. Collector-Emitter Voltage. ON CHARACTERISTICS. DC Current Gain. (IC = 0.1 mAdc, VCE = 10 Vdc). (IC = 1.0 mAdc, VCE = 10 Vdc). (IC = 10 mAdc, VCE = 10 Vdc). (IC = 10 mAdc, VCE
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