pn2222a vs 2n2222a
2n2222a
pn2222a arduinopn2222a
pn2222 vs 2n2222
2n2222 datasheet

2N2222. Low Power Bipolar Transistors. Page 1. 06/04/06 V1.0. Features: 2N2222. Unit. Collector Emitter Voltage. VCEO. 30. V. Collector Base Voltage. VCBO Duty Cycle ?2%. Package. Part Number. TO-18. 2N2222. Part Number Table Semiconductor data sheets and/or specifications can and do vary in different applications PN2222A. NPN General-Purpose Amplifier. Features. • This device is for use as a fairchildsemi.com/packing_dwg/PKG-ZA03D_BK.pdf. NPN Silicon. MAXIMUM RATINGS. Rating PN2222A. V(BR)CEO. 30. 40. –. –. Vdc. Collector–Base Breakdown Voltage. PN2222. (IC = 10 ?Adc, IE = 0). The 2N2222 is a common NPN bipolar junction transistor (BJT) used for general purpose All variations have a beta or current gain (hfe) of at least 100 in optimal conditions. A version of the 2N2222A in a larger metal TO-39 case, the 2N2219A had a Datasheet for 2N2222A Hi-reliability equivalent (PDF) by Microsemi Maximum ratings (TA = 25°C). Grenzwerte (TA = 25°C). PN2222A / 2N2222A. Collector-Emitter-volt. - Kollektor-Emitter-Spannung. E open. VCB0. 75 V. V. VEBO. Emitter-Base Voltage. 6.0. V. IC. Collector Current - Continuous. 1.0. A. TJ, Tstg PN2222A. *MMBT2222A **PZT2222A. PD. Total Device Dissipation. PN2222A / 2N2222A. NPN. General purpose Si-Epitaxial PlanarTransistors TS. Grenzwerte (TA = 25°C). PN2222A / 2N2222A. 75 V. 40 V. 6V. 625 mW 1).0.3. 1.0. V. V. VBE(sat). Base-Emitter Saturation Voltage *. IC = 150mA, VCE = 10V. IC = 500mA, VCE = 10V. 0.6. 1.2. 2.0. V. V. NPN General Purpose Amplifier. NPN Silicon. MAXIMUM RATINGS. Rating PN2222A. V(BR)CEO. 30. 40. –. –. Vdc. Collector–Base Breakdown Voltage. PN2222. (IC = 10 ?Adc, IE = 0).