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Introduction Insulated Gate Bipolar Transistor (IGBT)is a compact, ready to use experimenalt board. This is useful for students for the study of the characteristics of IGBT and to understand its different operating regions. It can be used as a stand alone unit with external DC power supply. ST2701 Scientech Technologies Pvt. Ltd. 5 Theory IGBT is the short form of Insulated Gate Bipolar Transistor. It is a three-terminal semiconductor switching device that can be used for fast switching with high efficiency in many types of electronic devices. These devices are mostly used in amplifiers for switching/processing complex wave patters with pulse width modulation (PWM). This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, TYPICAL CHARACTERISTICS Figure 18. IGBT Transient Thermal Impedance Figure 19. Diode Transient Thermal Impedance PULSE TIME (sec) 0.000001 0.0001 0.001 0.01 0.1 10 100 1000 0.0001 0.001 More Detail. The Insulated Gate Bipolar Transistor (IGBT) is a semiconductor device having three terminals - Gate (G), Emitter (E), and Collector (C). IGBT has been developed by combining the best qualities of both BJT and Power MOSFET. Hence, an IGBT exhibits high input impedance as a PMOSFET and has low ON-state power losses like a BJT. The VI characteristics of IGBT is as shown in Figure. In the forward direction, they are similar to those of bipolar transistors. The only difference here is that the controlling parameter is the gate to source voltage Vgs and the parameter being controlled is the drain current. The working principle of IGBT is based on Conductivity modulation. monitored electrical characteristics such as V CE and I CE. [9] N. Patil, "Prognostics of Insulated Gate Bipolar Transistors," Ph. D. dissertation, Dept. Mech. Eng., University of Maryland, College Park, MD, 2011. [10] E. Sutrisno, "Fault Detection and Prognostics of Insulated Gate Bipolar Transistor (IGBT) Using K-Nearest Neighbor Figure 2b can be used very effectively to model the dv/dt induced breakdown characteristic of a MOSFET. It shows both main breakdown mechanisms, namely the dv/dt induced turn-on of the parasitic bipolar transistor present in all power MOSFETs and the dv/dt induced turn-on of the channel, as a function of the gate terminating impedance. IGBT is an acronym for Insulated Gate Bipolar Transistor. It is classified a power semiconductor device in the transistor field. And IGBT is able to contribute to achieve higher efficiency and energy saving for wide range of high voltage and high current applications. Power Semiconductor Device Features (Comparison with IGBT) menting prognostics on critical components such as IGBT, cost benefits can be achieved by avoidance of unscheduled mainte-nance while improving safety. IGBT have switching characteristics similar to a metal oxide semiconductor field effect transistor (MOSFET), and the high current and voltage capabilities of a bipolar junction transistor Insulated Gate Bipolar Transistor (IGBT). • These devices have near ideal characteristics for high voltage (> 100V)